A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor
A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor
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DOI：
10.1109/tcad.2022.3166107
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发表时间：
2022-07
影响因子：
2.9
通讯作者：
Tong Wu;Jing Guo
中科院分区：
文献类型：
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作者：
Tong Wu;Jing Guo
开发了一种多尺度模拟方法来模拟用于量子计算的锗 (Ge) 孔的量子点 (QD) 阵列。在 QD 结构的 3D 数值量子器件模拟的指导下，获得了相邻空穴 QD 之间隧道耦合的分析模型。然后对 QD 阵列处理器的两量子位纠缠量子门操作和量子电路特性进行建模。对双量子位 Ge 空穴量子门的器件分析表明，与硅对应物相比，门速度更快，工艺变异性更小，并且对特征尺寸的要求不太严格。多尺度仿真方法允许从自下而上、基于物理的角度评估量子处理器电路性能。该模拟方法在Ge QD阵列处理器上的应用表明了其在量子化学模拟中制备高保真拟态的巨大潜力。
A multiscale simulation method is developed to model a quantum dot (QD) array of germanium (Ge) holes for quantum computing. Guided by 3-D numerical quantum device simulations of QD structures, an analytical model of the tunnel coupling between the neighboring hole QDs is obtained. Two-qubit entangling quantum gate operations and quantum circuit characteristics of the QD array processor are then modeled. A device analysis of two-qubit Ge hole quantum gates demonstrates faster gate speed, smaller process variability, and less stringent requirement of feature size, compared to its silicon counterpart. The multiscale simulation method allows the assessment of the quantum processor circuit performance from a bottom-up, physics-informed perspective. The application of the simulation method to the Ge QD array processor indicates its promising potential for preparing high-fidelity ansatz states in quantum chemistry simulations.