High-power semiconductor red laser arrays for use in photodynamic therapy
High-power semiconductor red laser arrays for use in photodynamic therapy
复制标题
用于光动力治疗的高功率半导体红色激光阵列
DOI：
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发表时间：
2005
影响因子：
4.9
通讯作者：
R. A. Hsi
中科院分区：
文献类型：
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作者：
Ivan Charamisinau;G. Happawana;Gary A. Evans;Jay B. Kirk;David P. Bour;Arye Rosen;R. A. Hsi
半导体激光脊阵列发射250毫瓦的波长为635纳米是设计用于光动力治疗应用。虽然脊状激光阵列的效率低于广域激光器，但由于热因素的考虑，它们更可靠，并且可以从相同的横向宽度产生更高的功率。导出了激光阵列有源层温度随脊间距、脊数和宽度的解析表达式，该表达式与有限元分析结果非常吻合。该解析表达式允许优化激光器和亚基板几何形状，以最小化活动区域温度与一个小的亚基板，散热器和封装的约束。
Semiconductor laser ridge arrays emitting 250 mW at a wavelength of 635 nm are designed for photodynamic therapy applications. Although ridge laser arrays are less efficient than broad area lasers, they are more reliable and can produce higher power from the same lateral width due to thermal considerations. An analytic expression for the active layer temperature of the laser array as a function of the ridge spacing, number of ridges, and width is derived and has excellent agreement with a finite-element analysis. This analytic expression allows optimization of the laser and the submount geometry to minimize the active region temperature with the constraint of a small submount, heat sink, and package.