Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection
Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection
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用于近红外光电探测的少层 InSe/PdSe2 范德华异质结构中的强层间跃迁
DOI：
10.1002/adfm.202104143
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发表时间：
2021-08-04
影响因子：
19
通讯作者：
Zhang, Wenjing
中科院分区：
文献类型：
--
作者：
Ahmad, Waqas;Liu, Jidong;Zhang, Wenjing
基于二维材料的近红外（NIR）光电探测器因其在下一代传感、热成像和光通信等领域的潜在应用而受到广泛研究。货车范德华（vdWs）异质结构的构建提供了极大的自由度来联合收割机和扩展2D材料的特征，从而在光子和光电器件上开辟了新的功能。在这里，II型InSe/PdSe 2 vdWs异质结具有强的层间跃迁的近红外光电探测证明。通过密度泛函理论计算预测了InSe和PdSe 2之间的强层间跃迁，并通过光致发光光谱和Kelvin探针力显微镜证实了这一点。该异质结构在高达1650 nm的近红外区域内表现出高度灵敏的光电探测。在该波长下，器件的光响应率、探测率和外量子效率分别达到58.8A W-1、1 × 10（10）Jones和4660%。结果表明，具有强层间跃迁的vdWs异质结构是一种很有前途的红外光电探测策略，为开发基于二维vdWs异质结构的高性能光电器件奠定了基础。
Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type-II InSe/PdSe2 vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe2 is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W-1, 1 x 10(10) Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high-performance optoelectronic devices based on 2D vdWs heterostructures.