Spin-glass-like state induced by Mn-doping into a moderate gap layered semiconductor SnSe2
Spin-glass-like state induced by Mn-doping into a moderate gap layered semiconductor SnSe2
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DOI：
10.1063/5.0077612
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发表时间：
2021-06
影响因子：
3.2
通讯作者：
Hongrui Huang;A. Rahman;Jianlin Wang;Yalin Lu;R. Akiyama;S. Hasegawa
中科院分区：
文献类型：
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作者：
Hongrui Huang;A. Rahman;Jianlin Wang;Yalin Lu;R. Akiyama;S. Hasegawa
各种类型的磁性可以出现在新兴的量子材料中，如货车德瓦尔斯层状材料。在这里，我们报告了锰原子的成功掺杂到后过渡金属二硫属化物半导体：SnSe$_2$。采用化学气相输运法（CVT）合成了Sn $1-x $Mn$x$Se${2}$（x = 0.04）单晶，并用X射线衍射（XRD）和X射线能谱（EDS）对其进行了表征。的磁性表明共存的铁磁和反铁磁相互作用之间的竞争，从温度依赖性的磁化强度，以及磁滞回线。这意味着在团簇内部形成具有铁磁相互作用的磁性团簇，团簇之间存在短程反铁磁相互作用，在~ 60 K以下出现自旋玻璃态。此外，我们通过$\textit{ab initio}$计算证实，铁磁相互作用来自锰掺杂剂的3 $\textit {d}$电子。我们的研究结果为理解和利用货车范德瓦尔斯层状材料的磁性提供了一个新的材料平台。
Various types of magnetism can appear in emerging quantum materials such as van der Waals layered ones. Here, we report the successful doping of manganese atoms into a post-transition metal dichalcogenide semiconductor: SnSe$_2$. We synthesized a single crystal Sn$_{1-x}$Mn$_x$Se$_{2}$ with $\textit{x}$ = 0.04 by the chemical vapor transport (CVT) method and characterized it by x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDS). The magnetic properties indicated a competition between coexisting ferromagnetic and antiferromagnetic interactions, from the temperature dependence of the magnetization, together with magnetic hysteresis loops. This means that magnetic clusters having ferromagnetic interaction within a cluster form and the short-range antiferromagnetic interaction works between the clusters; a spin-glass state appears below ~ 60 K. Furthermore, we confirmed by $\textit{ab initio}$ calculations that the ferromagnetic interaction comes from the 3$\textit{d}$ electrons of the manganese dopant. Our results offer a new material platform to understand and utilize the magnetism in the van der Waals layered materials.