k center dot p method for strained wurtzite semiconductors
k center dot p method for strained wurtzite semiconductors
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DOI：
10.1103/physrevb.54.2491
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发表时间：
1996-07-15
影响因子：
3.7
通讯作者：
Chang, CS
中科院分区：
文献类型：
--
作者：
Chuang, SL;Chang, CS
我们推导了纤锌矿半导体的有效质量哈密顿量，包括应变效应。该哈密顿量为计算纤锌矿体半导体和量子阱半导体的电子能带结构和光学常数提供了理论基础。我们应用凯恩模型导出应变纤锌矿半导体的带边能量和光学动量矩阵元。然后我们使用k。p微扰法导出了有效质量哈密顿量，并与基于Pikus-Bir模型的不变量法导出的有效质量哈密顿量进行了比较。我们得到的能带结构A（i）参数的群论模型明确的动量矩阵元素。我们还发现在这两个模型中使用的重要的物理量的正确定义和目前的价带色散的解析表达式，有效质量，和带间的光学跃迁动量矩阵元素附近的带边，考虑到应变效应。
We derive the effective-mass Hamiltonian for wurtzite semiconductors, including the strain effects. This Hamiltonian provides a theoretical groundwork for calculating the electronic band structures and optical constants of bulk and quantum-well wurtzite semiconductors. We apply Kane's model to derive the band-edge energies and the optical momentum-matrix elements for strained wurtzite semiconductors. We then use the k . p perturbation method to derive the effective-mass Hamiltonian, which is then checked with that derived using an invariant method based on the Pikus-Bir model. We obtain the band structure A(i) parameters in the group theoretical model explicitly in terms of the momentum-matrix elements. We also find the proper definitions of the important physical quantities used in both models and present analytical expressions for the valence-band dispersions, the effective masses, and the interband optical-transition momentum-matrix elements near the band edges, taking into account the strain effects.