Topological insulators from complex orbital order in transition-metal oxides heterostructures
Topological insulators from complex orbital order in transition-metal oxides heterostructures
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DOI：
10.1103/physrevb.84.201103
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发表时间：
2011-11-14
影响因子：
3.7
通讯作者：
Fiete, Gregory A.
中科院分区：
文献类型：
--
作者：
Rueegg, Andreas;Fiete, Gregory A.
在二维和三维晶格模型中，人们已经从理论上提出了由电子-电子相互作用动态产生的拓扑带绝缘体。我们提出的证据表明，由于纯粹的局部相互作用，二维版本可以在过渡金属氧化物的数字（111）异质结构中稳定下来。的拓扑相位是伴随着自发订购的复杂的轨道，我们讨论了它们的稳定性，相对于Hund的规则耦合，Jahn-Teller相互作用，和反转对称性破缺项。作为主要的竞争对手，我们确定了自旋和磁性相。
Topological band insulators which are dynamically generated by electron-electron interactions have been theoretically proposed in two-and three-dimensional lattice models. We present evidence that the two-dimensional version can be stabilized in digital (111) heterostructures of transition-metal oxides as a result of purely local interactions. The topological phases are accompanied by spontaneous ordering of complex orbitals and we discuss their stability with respect to the Hund's rule coupling, Jahn-Teller interaction, and inversion-symmetry breaking terms. As main competitors we identify spin-nematic and magnetic phases.