Radiation-induced changes in the dielectric properties of insulating ceramics at icrh frequencies
Radiation-induced changes in the dielectric properties of insulating ceramics at icrh frequencies
复制标题
ICRH 频率下辐射引起的绝缘陶瓷介电性能变化
DOI：
10.1016/0022-3115(88)90272-3
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发表时间：
1988
影响因子：
3.1
通讯作者：
P. Agnew
中科院分区：
文献类型：
--
作者：
S. N. Buckley;P. Agnew
在3 MeV质子辐照前后，在10~1000 MHz频率范围内测量了MgAl2O4、AlON、Si3N4和不同纯度氧化铝的介电损耗正切，每个原子产生高达5×10−2的位移。在所有材料中，随剂量递增的tanδ显著增加。最严重的退化，超过两个数量级，在最初损失最低的材料中以低频率出现。这些辐射诱导的增强在环境温度下的辐照后老化过程中恢复，尽管在200 MHz以上表现出的较小的增强保持完好。损耗增强与辐射引起的电荷晶格点缺陷的德拜驰豫是一致的。
The dielectric loss tangent of MgAl 2 O 4, AlON, Si 3 N 4 and various purities of alumina has been measured at frequencies between 10 and 1000 MHz before and after irradiation by 3 MeV protons generating up to 5× 10− 2 displacements per atom. Substantial increases of tan δ, progressive with dose, were evident in all the materials. The worst degradations, exceeding two orders of magnitude, developed at low frequencies in materials that initially had the lowest loss. These radiation induced enhancements recovered during post irradiation ageing at ambient temperatures though the smaller enhancement, manifest above 200 MHz, remained intact. The loss enhancements are consistent with Debye relaxations of radiation induced charge lattice point defects.