Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen.
Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen.
复制标题
氮气退火后溅射 TiO2/ZrO2 双层复合电介质的结构和电性能
DOI：
10.1186/1556-276x-7-31
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发表时间：
2012-01-05
影响因子：
--
通讯作者：
Ye Y
中科院分区：
文献类型：
--
作者：
Dong M;Wang H;Ye C;Shen L;Wang Y;Zhang J;Ye Y
采用射频磁控溅射法在Si衬底上制备了高介电常数的TiO 2/ZrO 2双层复合薄膜，并在573 ~ 973 K范围内进行了不同温度的退火处理。透射电镜观察表明，在773 K时，双层膜充分混合，具有良好的界面性能。采用高k栅介质TiO 2/ZrO 2/p-Si制作了金属氧化物半导体电容器，并使用Pt作为顶部栅电极和底部侧电极。经773 K退火后，TiO 2/ZrO 2/Si样品的介电常数最大，为46.1，漏电流密度为3.35 × 10- 5A/cm 2。
The high-k dielectric TiO2/ZrO2 bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N2 at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k gate dielectric TiO2/ZrO2/p-Si were fabricated using Pt as the top gate electrode and as the bottom side electrode. The largest property permittivity of 46.1 and a very low leakage current density of 3.35 × 10-5 A/cm2 were achieved for the sample of TiO2/ZrO2/Si after annealing at 773 K.