Synthesis and photoluminescence properties of silicon nanowires treated by high‐pressure water vapor annealing
Synthesis and photoluminescence properties of silicon nanowires treated by high‐pressure water vapor annealing
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DOI：
10.1002/pssa.200674321
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发表时间：
2007-05
期刊：
影响因子：
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通讯作者：
B. Salhi;B. Gelloz;N. Koshida;G. Patriarche;R. Boukherroub
中科院分区：
文献类型：
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作者：
B. Salhi;B. Gelloz;N. Koshida;G. Patriarche;R. Boukherroub
本文报道了利用气-液-固（VLS）技术在多孔硅（PS）模板上生长硅纳米线（SiNWs）以及高压水蒸气退火（HWA）对其光学性质的影响。金纳米粒子（Au NPs）的平均平均直径为50和20 nm的用作催化剂。通过在高温（540 °C）下由Au NP催化的硅烷气体（SiH 4）的热分解获得SiNW。所得的纳米结构显示出与初始金催化剂相当的直径，并且只有几微米长，没有优先生长方向。我们接下来检查了20 nm直径的SiNW的光学性质。所制备的SiNW显示出弱的光致发光（PL），这与来自缺陷中心的复合发射有关。SiNW在260 °C和2.6 MPa下的高压水蒸气退火（HWA）导致PL增加10倍，而发射带没有显著变化。经HWA处理的SiNW的TEM分析显示出被非晶氧化物层包围的结晶硅芯。（© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
This paper reports on silicon nanowires (SiNWs) growth on porous silicon (PS) template using vapor‐liquid‐solid (VLS) technique and the effect of high‐pressure water vapor annealing (HWA) on their optical properties. Gold nanoparticles (Au NPs) with average mean diameter of 50 and 20 nm were used as catalysts. The SiNWs were obtained by thermal decomposition of silane gas (SiH4) at high temperature (540 °C) catalyzed by the Au NPs. The resulting nanostructures display comparable diameter to the initial gold catalysts and are few microns long without a preferential growth direction. We have next examined the optical properties of the 20 nm diameter SiNWs. As‐prepared SiNWs display a weak photoluminescence (PL), which is related to the recombination emissions from defect centers. High‐pressure water vapor annealing (HWA) at 260 °C and 2.6 MPa of the SiNWs led to an increase of the PL by a factor 10 without significant changes in the emission band. TEM analysis of the HWA‐treated SiNWs showed a crystalline silicon core surrounded by an amorphous oxide layer. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)