Facet formation of uniform InAs quantum dots by molecular beam epitaxy
Facet formation of uniform InAs quantum dots by molecular beam epitaxy
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DOI：
10.1143/jjap.42.4166
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发表时间：
2003-06-01
期刊：
影响因子：
--
通讯作者：
Yamaguchi, K
中科院分区：
文献类型：
--
作者：
Kaizu, T;Yamaguchi, K
通过 Stranski-Krastanov (SK) 生长模式通过分子束外延生长均匀的 InAs 量子点，并研究了由于面形成而导致的自尺寸限制效应。 3D 点的刻面形成取决于生长条件。随着生长速率和砷压力的降低，晶面的晶体取向从{136}面转变为{101}面。经过刻面形成的自尺寸限制效应后，铟吸附原子的表面浓度增加，聚结点的密度也增加。低砷压力和低生长速率是抑制聚结并减少相干3D点尺寸波动的有效条件。结果发现，在低生长速率和低砷压力条件下，通过传统的SK模式生长可以实现InAs量子点的均匀形成。
Uniform InAs quantum dots were grown by molecular beam epitaxy via the Stranski-Krastanov (SK) growth mode, and the self-size-limiting effects due to facet formation were investigated. The facet formation of the 3D dots depends on the growth conditions. As the growth rate and the arsenic pressure decrease, the crystal orientation of the facet changes from the {136} plane to the {101} plane. After the self-size-limiting effects due to the facet formation, the surface concentration of indium adatoms increases, and the density of the coalescent dots also increases. The low arsenic pressure and the low growth rate are effective conditions for suppressing the coalescence and reducing the size fluctuation of the coherent 3D dots. As a result, it was found that the uniform formation of the InAs quantum dots can be achieved by conventional SK-mode growth under low growth rate and low arsenic pressure conditions.