B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing
B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing
复制标题
闪速退火时 B 偏析到晶界和多晶硅中的扩散
DOI：
10.1063/1.3688246
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发表时间：
2012
影响因子：
3.2
通讯作者：
R. Camillo
中科院分区：
文献类型：
--
作者：
Shouguang Jin;K. Jones;M. Law;R. Camillo
采用三维原子探针层析技术研究了快速退火后多晶Si中B掺杂原子向晶界的偏聚。层析重建允许直接测量的偏析系数，这被发现是更大的在较低的闪光温度与热预算，限制晶粒生长。霍尔测量证实了B在晶界处的失活，而二次离子质谱法被用来测量B在膜中的扩散。然后在扩散模型中模拟实验参数，该扩散模型准确地预测了在1150 °C、1250 °C和1350 °C的闪光温度下以及在常规快速热退火下B在多晶硅中的扩散。
Three-dimensional atom probe tomography was used to characterize the segregation of B dopant atoms to grain boundaries in polycrystalline Si after flash-assisted rapid thermal annealing. Tomographic reconstructions allowed direct measurement of segregation coefficients, which were found to be greater at lower flash temperatures with thermal budgets that limit grain growth. Hall measurements confirmed the deactivation of B at the grain boundaries, while secondary ion mass spectrometry was used to measure B diffusion in the film. Experimental parameters were then simulated in a diffusion model which accurately predicts the diffusion of B in polycrystalline Si at flash temperatures of 1150 °C, 1250 °C, and 1350 °C, as well as with conventional rapid thermal annealing.