Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation
Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation
复制标题
使用激光退火进行源极/漏极激活来增强 Gen n 沟道 MOSFET 的驱动电流
DOI：
10.1109/led.2006.880655
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发表时间：
2006
影响因子：
4.9
通讯作者：
Chunxiang Zhu
中科院分区：
文献类型：
--
作者：
Qingchun Zhang;Jidong Huang;N. Wu;Guoxin Chen;M. Hong;L. Bera;Chunxiang Zhu
采用KrF激光退火（LA）作为掺杂活化退火，成功制备了具有金属栅极和CVD HfO 2的栅极优先自对准Ge nMOSFET。通过在钽金属栅极上应用铝激光反射器，可以在不加热栅极堆的情况下选择性地退火源/漏（S/D）区域。同时实现了小的信噪比电阻和良好的栅极堆叠完整性。结果表明，与传统的快速热退火激活相比，采用LA激活可以获得更大的驱动电流和更低的阈值电压
A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO 2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation