Junction properties of Au/ZnO single nanowire Schottky diode
Junction properties of Au/ZnO single nanowire Schottky diode
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DOI：
10.1063/1.3339883
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发表时间：
2010-03
影响因子：
4
通讯作者：
Sachindranath Das;Jimin Choi;J. Kar;K. Moon;T. Lee;J. Myoung
中科院分区：
文献类型：
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作者：
Sachindranath Das;Jimin Choi;J. Kar;K. Moon;T. Lee;J. Myoung
在这项研究中，我们通过测量电流电压和X射线光电子能谱(XPS)对Au/ZnO单纳米线肖特基二极管进行了分析。用热离子发射模型计算的肖特基二极管势垒高度与XPS测量结果吻合较好，但低于理论预测值。考虑了界面态的电离来解释这种差异。
In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPS measurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.