High quality Hall sensors made of heavily doped n-InSb epitaxial films
High quality Hall sensors made of heavily doped n-InSb epitaxial films
复制标题
DOI：
10.1016/j.sna.2004.03.029
复制
发表时间：
2004-10-04
影响因子：
4.6
通讯作者：
Grabowski, J
中科院分区：
文献类型：
--
作者：
Berus, T;Oszwaldowski, M;Grabowski, J
在这方面的贡献，我们确认，重施主掺杂的外延层的InSb的霍尔传感器的制备工作在很宽的温度范围内的优良材料。特别地，我们证实了施主浓度为（1-2）× 10 ~（18）cm ~（-3）的InSb外延薄膜是制造用于精确测量磁场的霍尔传感器的最佳参数，这种传感器的磁灵敏度K > 0.1V/T，磁灵敏度的温度依赖性β小于或等于0.01%每度和输入/输出电阻的温度系数α
In this contribution we confirm that heavily donor doped epitaxial layers of InSb are excellent material for the preparation of Hall sensors working in a broad range of temperatures. In particular, we confirm that InSb epitaxial thin films having the donor concentration of (1-2) x 10(18) cm(-3) have optimal parameters for manufacturing Hall sensors for precise measurements of magnetic field.Such sensors have the magnetic sensitivity K > 0.1 V/T, the temperature dependence of the magnetic sensitivity beta less than or equal to 0.01% per degree and the temperature coefficient of the input/output resistance alpha