High-Frequency Integrated Point-of-Load Converters: Overview
High-Frequency Integrated Point-of-Load Converters: Overview
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DOI：
10.1109/tpel.2013.2238954
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发表时间：
2013-01
影响因子：
6.7
通讯作者：
F. Lee;Qiang Li
中科院分区：
文献类型：
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作者：
F. Lee;Qiang Li
这篇综述白皮书重点介绍了集成负载点(POL)转换器的最新技术和趋势。这篇论文包含了广泛的文献综述，从器件技术和磁性材料到集成技术和方法。本论文分为三个主要部分。1)讨论了沟槽MOSFET、横向MOSFET和GaN高电子迁移率晶体管等器件技术及其应用。还评估了器件封装对高频集成的关键作用。2)磁性材料：近年来，一些新的磁性材料被探索出来，以促进高频POL转换器的磁集成。这些数据被收集和组织，以帮助选择不同频率范围的磁性材料。3)集成方法，重点介绍了磁集成技术和方法。分为两个集成级，即晶圆级和封装级。提供了每个集成级的详细信息，以确定合适的电流范围和频率范围。以磁性元件为衬底的三维集成是一种很有前途的集成方法。通过使用集成GaN器件和低轮廓低温共烧陶瓷电感衬底，最新的20-A 5-MHz三维集成POL转换器的功率密度高达1100W/in3，与相同电流水平的工业产品相比提高了10倍。
This overview paper focuses on state-of-the-art technologies and trends toward the integration of point-of-load (POL) converters. This paper encompasses an extended survey of literature ranging from device technologies and magnetic materials to integration technologies and approaches. This paper is organized into three main sections. 1) Device technologies, including the trench MOSFET, lateral MOSFET, and gallium nitride (GaN) high electron mobility transistor, are discussed along with their intended applications. The critical role of device packaging to highfrequency integration is also assessed. 2) Magnetic materials: In recent years, a number of new magnetic materials have been explored to facilitate magnetic integration for high-frequency POL converters. These data are collected and organized to help selecting magnetic material for various frequency ranges. 3) Integration methods, which are defined with the focus on magnetic integration techniques and approaches. Two integration levels are classified, namely wafer level and package level. Detailed information is presented for each integration level to identify suitable current scale and frequency range. Three-dimensional integration, which uses magnetic component as a substrate, is one of the promising integration methods. By using an integrated GaN device and a low-profile low-temperature cofired ceramic inductor substrate, the power density of the latest 20-A 5-MHz 3-D integrated POL converter is demonstrated as high as 1100 W/in3, which is a factor of 10 improvements compared to industry products at the same current level.