High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors
High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors
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DOI：
10.1073/pnas.1909932116
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发表时间：
2020-01-07
影响因子：
11.1
通讯作者：
Takeya, Jun
中科院分区：
文献类型：
--
作者：
Makita, Tatsuyuki;Kumagai, Shohei;Takeya, Jun
薄膜晶体管（TFT）是任何电子设备中不可或缺的组成部分，在开关、处理和传输电子信息方面发挥着至关重要的作用。TFT制造工艺固有地需要金属、半导体和介电层等的顺序沉积，这使得难以实现高度集成器件的可靠生产。集成问题在有机TFT（OTFT）中更加明显，特别是对于溶液处理的有机半导体，这是由于底层与印刷技术兼容的限制。我们展示了一种突破性的方法来集成OTFT的有源半导体层。在这种方法中，由几个分子层厚的单晶有机半导体组成的溶液处理的半导体膜被水剥离，作为水表面上的自立式剥离膜，然后直接转移到任何给定的底层。这种半导体薄膜保持了其原有的单一结晶性，从而具有优异的电子特性，迁移率高达12 cm（2）。V-1.s（-1）。实现晶片级单晶的转移而几乎没有电性能劣化的能力意味着本方法是可扩展的。本研究中的演示表明，目前的转移方法可以彻底改变印刷电子产品，并构成TFT制造工艺的关键一步。
Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer-thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12 cm(2). V-1.s(-1). The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.