Tunable broadband antireflection structures for silicon at terahertz frequency
Tunable broadband antireflection structures for silicon at terahertz frequency
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DOI：
10.1063/1.3075059
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发表时间：
2009-01
影响因子：
4
通讯作者：
Yuting W. Chen;P. Han;Xiang Zhang
中科院分区：
文献类型：
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作者：
Yuting W. Chen;P. Han;Xiang Zhang
我们报告增强传输的宽带太赫兹电磁波的频率范围从0.2到3.15太赫兹使用硅与微金字塔表面结构。与平面硅衬底相比，我们观察到当使用具有60 μ m周期微金字塔的样品时，太赫兹功率的反射率最大降低89%。通过改变微锥结构的周期，增强透射的截止频率从0.74 THz调谐到2.93 THz，增强带宽从0.91 THz增加到3.15 THz。
We report enhanced transmission of broadband terahertz electromagnetic waves in the frequency range from 0.2 to 3.15 THz using silicon with micropyramid surface structures. We observe a maximum 89% reduction in reflectivity of terahertz power when the sample with 60-μm-period micropyramids is used, compared to a planar silicon substrate. By varying the period of micropyramid structures from 110 to 30 μm, the cutoff frequency of enhanced transmission is tuned from 0.74 to 2.93 THz and the bandwidth of enhancement increases from 0.91 to 3.15 THz, respectively.