Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing
Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing
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发表时间：
2013-06
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通讯作者：
Rui Zhang;J.C. Lin;Xiao Yu;M. Takenaka;Shinichi Takagi
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作者：
Rui Zhang;J.C. Lin;Xiao Yu;M. Takenaka;Shinichi Takagi
结果表明，Ge导带和价带中的陷阱是导致高Ns区Ge MOSFET迁移率降低的主要因素，而表面粗糙度散射可以定量地解释不受陷阱影响的霍尔迁移率。研究还发现，氘原子PDA能有效地降低Ge导带内的陷阱密度，从而提高有效电子迁移率。在400°C下，采用原子氘PDA的Ge nMOSFET在Ns=8×1012 cm-2时实现了488 cm-2/Vs的高有效电子迁移率。
It is found that traps inside conduction and valence bands of Ge is the dominating factor of effective mobility reduction for Ge MOSFETs in high Ns region and that surface roughness scattering can quantitatively explain the Hall mobility, which is free from the trapping effects. It is also found that atomic deuterium PDA sufficiently reduces the trap density inside conduction band of Ge, resulting in enhancement of effective electron mobility. Record high effective electron mobility of 488 cm2/Vs has been realized at Ns=8×1012 cm-2 for Ge nMOSFETs with atomic deuterium PDA at 400°C.