Electronic Sputtering of Thin Conductors by Neutralization of Slow Highly Charged Ions
Electronic Sputtering of Thin Conductors by Neutralization of Slow Highly Charged Ions
复制标题
DOI：
10.1103/physrevlett.78.2481
复制
发表时间：
1997-03
影响因子：
8.6
通讯作者：
T. Schenkel;M. Briere;H. Schmidt-Böcking;K. Bethge;D. Schneider
中科院分区：
文献类型：
--
作者：
T. Schenkel;M. Briere;H. Schmidt-Böcking;K. Bethge;D. Schneider
用透射法测定了高电荷态慢离子（v{approx 0. 3v {sub Bohr}）（O{sup 7+}，Ar{sup 16，18 +}，Kr{sup 33+}，Th{sup 65+}）通过10 nm厚非晶碳膜后的电荷态。直到最高电荷态，离子在小于21 fs的时间内在箔中达到电荷态平衡。高产量的二次离子发射的箔作为结果的几十到几百keV的势能在离子中和过程中的耗散。对于q{gt}25+，正二次碳离子产率强烈增加。我们的研究结果表明，第一次，发生电子溅射的慢离子与薄导体的相互作用。{版权} {美国物理学会}
Charge states of slow (v{approx}0.3v{sub Bohr}) highly charged ions (O{sup 7+}, Ar{sup 16,18+}, Kr{sup 33+}, Th{sup 65+}) have been determined after transmission through 10nm thick amorphous carbon foils. Up to the highest charge states, ions reach charge state equilibrium in the foils within less than 21fs. High yields of secondary ions are emitted from the foils as a result of the dissipation of tens to hundreds of keV of potential energy during ion neutralization. Positive secondary carbon ion yields increase strongly for q{gt}25+. Our results demonstrate, for the first time, the occurrence of electronic sputtering in the interaction of slow ions with thin conductors. {copyright} {ital 1997} {ital The American Physical Society}