Reversible resistance switching by excess hydrogen doping in rutile TiO2
Reversible resistance switching by excess hydrogen doping in rutile TiO2
复制标题
金红石型二氧化钛中过量氢掺杂的可逆电阻转换
DOI：
10.35848/1882-0786/abb872
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发表时间：
2020-09
影响因子：
2.3
通讯作者：
G. Lim;M. Maesato;R. Nakayama;Dae‐Woon Lim;H. Kitagawa
中科院分区：
文献类型：
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作者：
G. Lim;M. Maesato;R. Nakayama;Dae‐Woon Lim;H. Kitagawa
采用低温氢离子束辐照的方法研究了过量氢掺杂对金红石型TiO_2薄膜的影响。在300 K的氢辐照显著降低了TiO 2薄膜的电阻率。在50 K下进一步辐照过量H掺杂并随后加热至室温导致3D Mott和Efros-Shklovskii可变范围跳跃行为之间的电阻可逆变化。低温下的非平衡氢掺杂和高温下过量氢的脱附导致金红石型TiO 2中不可预见的可逆电阻开关。
The effects of excess hydrogen-doping on rutile TiO2 thin film have been investigated by low-temperature hydrogen ion beam irradiation with in situ transport measurements. The hydrogen irradiation at 300 K dramatically decreases the resistivity of TiO2 film. Further irradiation at 50 K for excess H-doping and subsequent heating to room temperature result in reversible change in resistance between 3D Mott and Efros–Shklovskii variable range hopping behaviors. The non-equilibrium hydrogen doping at low temperature and desorption of excess hydrogen at elevated temperature give rise to unforeseen reversible resistance switching in rutile TiO2.