Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment
Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment
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DOI：
10.1063/5.0145659
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发表时间：
2023-04
影响因子：
4
通讯作者：
Yunlong He;B. Sheng;Yuehua Hong;Peng Liu;Xiaoli Lu;Fang Zhang;Xichen Wang;Yuan Li;Xuefeng Zheng;X. Ma;Yi Hao
中科院分区：
文献类型：
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作者：
Yunlong He;B. Sheng;Yuehua Hong;Peng Liu;Xiaoli Lu;Fang Zhang;Xichen Wang;Yuan Li;Xuefeng Zheng;X. Ma;Yi Hao
本文报道了两种含氧等离子体处理的β-Ga_2O_3肖特基势垒二极管（SBD），包括N_2O等离子体处理和O_2等离子体处理，并制备了无等离子体处理的SBD作为对比。研究了三种器件的I-V特性、击穿特性和陷阱态特性。结果表明，采用N2 O等离子体处理后，SBD的开启电压可降低至0.6V，电流密度可达750 A/cm 2，导通电阻可达3.5m Ω cm 2。此外，采用N2 O等离子体的SBD的击穿电压比传统SBD高出50.2%，达到323 V。此外，研究了器件的陷阱态特性，表明含氧等离子体可以降低阳极区部分深能级陷阱态密度，有效改善表面质量。
This Letter reports two kinds of oxygen-containing plasma treated β-Ga2O3 Schottky barrier diodes (SBDs), including N2O plasma treatment and O2 plasma treatment, and the SBD without plasma is prepared for comparison. I–V characteristics, breakdown characteristics, and trap state characteristics of three devices have been studied. It is found that the turn-on voltage of SBDs with N2O plasma can reduce to 0.6 V, and the better current density of 750 A/cm2 and an on-resistance of 3.5 mΩ cm2 are obtained after the N2O plasma treatment. Moreover, the breakdown voltage of SBDs with N2O plasma is 50.2% higher than the conventional one, whose value reaches 323 V. In addition, the trap states' characteristics of the devices are studied, which show that the oxygen-containing plasma can reduce the deep level trap states density partly in the anode region, which can improve the surface quality effectively.