Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate
Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate
复制标题
DOI：
10.1063/1.4945598
复制
发表时间：
2016-04
影响因子：
4
通讯作者：
C. S. Schulze;Xue Huang;Christopher Prohl;V. Füllert;S. Rybank;S. Maddox;S. March;S. Bank;M. Lee;A. Lenz
中科院分区：
文献类型：
--
作者：
C. S. Schulze;Xue Huang;Christopher Prohl;V. Füllert;S. Rybank;S. Maddox;S. March;S. Bank;M. Lee;A. Lenz
用截面扫描隧道显微镜研究了生长在GaP/Si（001）衬底上的InAs/InGaAs量子点阱结构的原子结构和化学计量比。平均横向尺寸为20 nm，高度高达8 nm，和In浓度高达100%的确定，是非常相似的，与众所周知的量子点生长在GaAs衬底上。在GaP/Si（001）和GaAs（001）上并排生长的纳米结构的光致发光光谱显示，在GaP/Si（001）上生长的纳米结构的基态发射波长略微蓝移，与GaAs（001）上相比，具有更高的峰值强度。这证明了GaP/Si（001）模板用于将III-V族光电子元件集成到硅基技术中的高潜力。
The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.