Low leakage a-Si:H thin film transistors deposited on glass substrates using hot-wire chemical vapor deposition
Low leakage a-Si:H thin film transistors deposited on glass substrates using hot-wire chemical vapor deposition
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使用热线化学气相沉积在玻璃基板上沉积低泄漏 a-Si:H 薄膜晶体管
DOI：
10.1116/1.2183296
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
A. Madan
中科院分区：
文献类型：
--
作者：
F. Taghibakhsh;K. Karim;A. Madan
采用石墨丝在康宁1737玻璃衬底上制备了稳定、低漏电流的热丝化学气相沉积（HWCVD）薄膜晶体管（TFT）。使用底栅、反向交错、自对准、低温工艺来沉积TFT，其中钼金属栅极、由夹在两个等离子体增强化学气相沉积（PECVD）a-SiNx：H层之间的HWCVD a-Si：Hi层组成的三层、随后是PECVD n+ a-Si：H欧姆接触层、以及用于源极和漏极接触的最终铝金属。离子闪烁比超过108，漏电流小于10 - 13 A，场效应迁移率为0.13cm ~ 2闪烁V，亚阈值斜率为0.6V闪烁十倍。时间应力偏置测量显示HW a-Si TFT的β为0.156，与其完全PECVD对应物相比显示出上级稳定性。
Stable, low leakage current hot-wire chemical vapor deposition (HWCVD) thin film transistors (TFTs) were fabricated using graphite filament on Corning 1737 glass substrates. TFTs were deposited using a bottom gate, inverted staggered, self-aligned, low temperature process with a molybdenum metal gate, a trilayer consisting of a HWCVD a-Si:Hi layer sandwiched between two plasma enhanced chemical vapor deposition (PECVD) a-SiNx:H layers, followed by a PECVD n+ a-Si:H Ohmic contact layer, and a final aluminum metal for source and drain contacts. Ion∕Ioff ratio exceeds 108 and the leakage current is less than 10−13A, while the field effect mobility is in the range of 0.13cm2∕Vs and the subthreshold slope is 0.6V∕decade. Time stress bias measurements show β of 0.156 for HW a-Si TFTs, showing superior stability compared to their fully PECVD counterparts.