Tracing the ionic evolution during ILG induced phase transformation in strontium cobaltite thin films
Tracing the ionic evolution during ILG induced phase transformation in strontium cobaltite thin films
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追踪锶钴矿薄膜中 ILG 诱导相变过程中的离子演化
DOI:
10.1088/1361-648x/abd1b7
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发表时间:
2020-12
期刊:
影响因子:
--
通讯作者:
Lu Nianpeng
中科院分区:
文献类型:
--
作者:
Gao Lei;Ji Ailing;Cao Zexian;Lu Nianpeng
Ionic liquid gating (ILG) that drives the ions incorporate into or extract from the crystal lattice, has emerged as a new pathway to design materials. Although many intriguing emergent phenomena, novel physical properties and functionalities have been obtained, the gating mechanism governing the ion and charge transport remains unexplored. Here, by using the model system of brownmillerite SrCoO2.5 and the corresponding electric-field controlled tri-state phase transformation among the pristine SrCoO2.5, hydrogenated HSrCoO2.5 and oxidized perovskite SrCoO3−δ through the dual ion switch, the ionic diffusion and electronic transport processes were carefully investigated. Through controlling gating experiment by design, we find out that the collaborative interaction between charge transport and ion diffusion plays an essential role to prompt the hydrogen or oxygen ions incorporate into the crystal lattice of SrCoO2.5, and therefore leading to formation of new phases. At region closer to the electrode, the electron can shuttle more readily in (out) the material, correspondingly the incorporation of hydrogen (oxygen) ions and phase transformation is largely affiliated. With the compensated charge of electron as well as the reaction front gradually moving away from the electrode, the new phases would be developed successively across the entire thin film. This result unveils the underlying mechanism in the electric-field control of ionic incorporation and extraction, and therefore provides important strategy to achieve high efficient design of material functionalities in complex oxide materials.
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DOI:
10.4018/978-1-59140-053-0.ch001
发表时间:
2003
期刊:
--
影响因子:
--
作者:
M. Rafanelli
通讯作者:
M. Rafanelli
影响因子:
1.8
作者:
N. Mott
通讯作者:
N. Mott
影响因子:
16.6
作者:
Sun JP;Matsuura K;Ye GZ;Mizukami Y;Shimozawa M;Matsubayashi K;Yamashita M;Watashige T;Kasahara S;Matsuda Y;Yan JQ;Sales BC;Uwatoko Y;Cheng JG;Shibauchi T
通讯作者:
Shibauchi T
影响因子:
3.7
作者:
Munoz, A.;de la Calle, C.;Rivas, J.
通讯作者:
Rivas, J.
影响因子:
17.1
作者:
Lingchao Zhang;S. Zeng;Xinmao Yin;T. Asmara;P. Yang;K. Han;Yu Cao;Wenxiong Zhou;D. Wan;C. Tang;A. Rusydi;Ariando;T. Venkatesan
通讯作者:
Lingchao Zhang;S. Zeng;Xinmao Yin;T. Asmara;P. Yang;K. Han;Yu Cao;Wenxiong Zhou;D. Wan;C. Tang;A. Rusydi;Ariando;T. Venkatesan