MgO-mixed Ba0.6Sr0.4TiO3 bulk ceramics and thin films for tunable microwave applications
MgO-mixed Ba0.6Sr0.4TiO3 bulk ceramics and thin films for tunable microwave applications
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DOI：
10.1063/1.1505669
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发表时间：
2002-09
影响因子：
3.2
通讯作者：
Wontae Chang;L. Sengupta
中科院分区：
文献类型：
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作者：
Wontae Chang;L. Sengupta
研究了Ba0.6Sr0.4TiO3（BST）和1.0、20.0、40.0和60.0 wt % MgO混合BST块体陶瓷和薄膜的介电性能。研究了MgO与BST混合对BST相变的影响。据观察，Mg取代到BST中导致在α-四氢BST相变峰向较低的温度移动。Mg取代BST和MgO混合相的BST相变峰被压低和展宽，导致室温下介电常数和介电损耗降低。在750°C、200 mTorr的氧气环境压力下，通过脉冲激光沉积在（100）MgO单晶衬底上沉积BST和1.0、20.0、40.0和60.0 wt % MgO混合的BST薄膜（约0.3 μm厚）。与纯BST和Mg取代的BST薄膜相比，MgO-BST复合薄膜显示出相对高的介电Q（=1/tan δ），同时保持有用的介电调谐。
The dielectric properties of Ba0.6Sr0.4TiO3 (BST) and 1.0, 20.0, 40.0, and 60.0 wt % MgO-mixed BST bulk ceramics and thin films were investigated for tunable microwave applications. The effects of MgO mixing with BST on BST phase transitions were examined. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. Mg-substituted BST and MgO-mixed phases exhibit depressed and broadened BST phase transition peaks, resulting in decreased dielectric constants and dielectric losses at room temperature. BST and 1.0, 20.0, 40.0, and 60.0 wt % MgO-mixed BST thin films (∼0.3 μm thick) were deposited on (100) MgO single-crystal substrates at 750°C in an oxygen ambient pressure of 200 mTorr by pulsed laser deposition. The MgO–BST composite thin films showed a relatively high dielectric Q (=1/tan δ) compared to the pure BST and Mg-substituted BST thin films while retaining useful dielectric tuning.