Photoemission from Silicon Photodiodes and Induced Changes in the Detection Efficiency in the Far Ultraviolet
Photoemission from Silicon Photodiodes and Induced Changes in the Detection Efficiency in the Far Ultraviolet
复制标题
硅光电二极管的光电发射和远紫外检测效率的变化
DOI：
10.1063/1.54605
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
L. Canfield
中科院分区：
文献类型：
--
作者：
R. Vest;L. Canfield
半导体光电二极管的光电发射在远紫外辐射检测中作为一种伪效应存在。在硅转移标准中测量了这种光发射效应的大小，发现在5 nm到165 nm的光谱区域内是显著的。在某些操作条件下，这些光电二极管在更传统的半导体模式下的效率被这种光电发射改变了多达14%。已经确定并应该采用几乎消除光发射影响的应用结构。在光导模式下使用这些光电二极管（作为太阳盲探测器）的可能性被发现受到测试设备的时间不稳定性和空间均匀性的限制。
Photoemission from semiconductor photodiodes exists as a spurious effect in the detection of radiation in the far ultraviolet. The magnitude of this photoemission effect in silicon transfer standards has been measured and found to be significant in the spectral region from 5 nm to 165 nm. The efficiency of these photodiodes in the more conventional semiconducting mode was altered by this photoemission as much as 14% under some conditions of operation. Application configurations which virtually eliminate the influences of photoemission have been identified and should be employed. The possibility of using these photodiodes in a photoemissive mode (as solar-blind detectors) was found to be limited by the temporal instability and spatial uniformity of the devices tested.