Millisecond anneal for ultra-shallow junction applications
Millisecond anneal for ultra-shallow junction applications
复制标题
适用于超浅结应用的毫秒退火
DOI：
10.1109/iwjt.2010.5474997
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Yong Chen
中科院分区：
文献类型：
--
作者：
J. Lu;Yonggen He;Yong Chen
随着 CMOS 器件的尺寸缩小，掺杂剂激活、结轮廓控制和硅化物工程变得越来越重要。为了解决这些超浅结 (USJ) 挑战，毫秒退火 (MSA) 已成为先进 CMOS 器件制造的主流热工艺技术。在本文中，我们将讨论 MSA 在 USJ 中的两类主要应用：通过有限的扩散实现有效的掺杂剂激活，以及促进镍基硅化并减少泄漏。还将研究一些问题和解决这些问题的流程解决方案。
As CMOS devices are scaled down, dopant activation, junction profile control and silicide engineering become increasingly important. To address these ultra-shallow junction (USJ) challenges, millisecond anneal (MSA) has emerged as a main stream thermal process technology for advanced CMOS device fabrication. In this paper, we will discuss two major classes of applications for MSA in USJ: achieving effective dopant activation with limited diffusion and to facilitate Ni-based silicidation with reduced leakage. Some issues and process solutions to address them will also be examined.