Crystalline reconstruction in Ni–Cr–Fe/Ni–Fe films
Crystalline reconstruction in Ni–Cr–Fe/Ni–Fe films
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DOI：
10.1063/1.1640804
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发表时间：
2004-01
影响因子：
4
通讯作者：
Tsann Lin;D. Mauri;B. York;P. Rice
中科院分区：
文献类型：
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作者：
Tsann Lin;D. Mauri;B. York;P. Rice
研究发现，当依次沉积Ni-Cr-Fe铁磁薄膜和Ni-Fe铁磁薄膜时，晶体结构发生了重构，而当沉积顺序相反时，晶体结构不发生重构。这种意外现象导致Ni-Cr-Fe/Ni-Fe膜表现得更像单层膜，其表现出比Ni-Fe/Ni-Cr-Fe膜更低的电阻、更强的1111织构和更大的多晶晶粒。该结晶重构使得各向异性磁阻（AMR）传感器表现出高AMR系数，并且还使得巨磁阻（GMR）传感器表现出高GMR系数。通过控制这种晶体重构，可以优化GMR特性以用于GMR传感器的正确操作。
It is found in this study that crystalline reconstruction occurs when a nonmagnetic Ni–Cr–Fe film and a ferromagnetic Ni–Fe film are sequentially deposited, but does not occur when the deposition sequence is reversed. This unexpected phenomenon causes the Ni–Cr–Fe/Ni–Fe films to behave more like a monolayer film that exhibits lower electrical resistance, stronger 〈111〉 texture, and larger polycrystalline grains than Ni–Fe/Ni–Cr–Fe films. This crystalline reconstruction causes an anisotropy magnetoresistance (AMR) sensor to exhibit a high AMR coefficient, and also causes a giant magnetoresistance (GMR) sensor to exhibit a high GMR coefficient. By controlling this crystalline reconstruction, GMR properties can be optimized for the proper operation of the GMR sensor.