Reduction of photoscission of σ bonds in polysilanes by fullerene doping
Reduction of photoscission of σ bonds in polysilanes by fullerene doping
复制标题
富勒烯掺杂减少聚硅烷中 σ 键的光断裂
DOI：
10.1063/1.366584
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
R. West
中科院分区：
文献类型：
--
作者：
Shin‐Ichiro Ninomiya;Y. Ashihara;Y. Nakayama;K. Oka;R. West
本文报道了C60掺杂有效地减少了聚硅烷中σ键的光断裂。测定了聚硅烷的光致发光随C60掺杂量的变化规律。结果表明，σ键的光分裂与光产生的电子-空穴对有关，而与空穴或电子无关。当电子-空穴对非辐射复合时，除了剪切σ键所需的热能外，更可能需要释放能量。C60掺杂不影响光解过程的活化能，但使光解截面减小。结果表明，C60掺杂不仅对芳香侧基的聚硅烷有猝灭作用，对饱和烃侧基的聚硅烷也有猝灭作用。
We report here an effective reduction of photoscission of σ bonds in polysilanes by C60 doping. The temporal variation of photoluminescence in polysilanes has been measured as a function of a doping amount of C60. The results indicate that the photoscission of σ bonds is related to a photogenerated electron-hole pair rather than a hole or an electron. The energy released when the electron-hole pair recombines nonradiatively is more likely required in addition to the thermal energy to scissor σ bonds. The C60 doping does not affect the activation energy of the photoscission process but decreases the photoscission cross-section. It is also demonstrated that the photoluminescence quenching by the C60 doping is observed for polysilanes not only with aromatic side groups but also with saturated hydrocarbon side groups.