Field induced quenching of the energy gap in single crystal CeNiSn
Field induced quenching of the energy gap in single crystal CeNiSn
复制标题
单晶 CeNiSn 中能隙的场致淬火
DOI：
10.1143/jpsj.67.2455
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发表时间：
1998
影响因子：
1.7
通讯作者：
H. Fujii
中科院分区：
文献类型：
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作者：
K. Sugiyama;K. Kindo;G. Nakamoto;T. Takabatake;H. Fujii
高场纵向磁电阻和磁化强度的测量已进行了高达36 T的单晶CeNiSn，显示金属行为的电阻率沿着a轴。如先前在半导体样品中所报道的，在高于10 T的高场中发现沿着a -、B -和c -轴的大的负磁阻。在15 T附近观察到磁化强度沿a轴沿着的变磁行为. log ρ（H）的线性场依赖性表明，4f电子矩的塞曼能淬灭了CeNiSn费米面上的赝能隙.
High-field longitudinal magnetoresistance and magnetization measurements up to 36 T have been carried out on a single crystal CeNiSn which shows metallic behavior in the resistivity along the a -axis. Large negative magnetoresistances are found along the a -, b - and c -axes in high fields above 10 T as previously reported in a semiconducting sample. A metamagnetic behaviour in the magnetization is observed along the a -axis at around 15 T. The linear field dependence of log ρ( H ) indicates that the Zeeman energy of the 4 f -electron moment quenches the pseudo energy gap on the Fermi surface in CeNiSn.
Taku J.Sato、Hiroaki Kadowaki、Hideki Yoshizawa、Toshikazu Ekino、Toshiro Takabatake、Hironobu Fujii、L.P.Regnault 和 Yosikazu Isikawa：“近藤半导体 CeNiSn 中反铁磁相关性的中子散射研究”J.Phys.Condens.Matter。
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