Effect of Cu concentration on the formation of Cu1−x Znx shape memory alloy thin films
Effect of Cu concentration on the formation of Cu1−x Znx shape memory alloy thin films
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DOI：
10.1016/j.apsusc.2014.01.119
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发表时间：
2014-11
影响因子：
6.7
通讯作者：
İ. Karahan;R. Özdemir
中科院分区：
文献类型：
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作者：
İ. Karahan;R. Özdemir
CuxZn 1 −x（x= 0.06，0.08，0.1）沉积物通过电沉积方法制备。通过循环伏安法（CV）、X射线衍射（XRD）、扫描电子显微镜（SEM）和直流电阻率测试等手段对薄膜的结构和电学性能进行了研究。通过XRD图谱对样品的物相进行了鉴定。XRD图谱显示对应于、β和γ相的特征XRD峰。随着Cu ~（2+）取代量的增加，试样的晶粒尺寸减小，显微应变增大。SEM研究揭示了随着Cu含量的增加，样品的细颗粒性质。DC电阻率指示所制备的样品的金属性质。结果表明，Cu离子对Cu-Zn样品的结构和电阻率性能有重要影响。
The CuxZn1−x(x= 0.06, 0.08, 0.1) deposits were fabricated by a electrodeposition method. The structural and electrical properties of the films were investigated by cyclic voltammetry (CV), X-ray diffraction (XRD), Scanning electron micrograph (SEM), and DC resistivity measurements. Phase identification of the samples was studied by the XRD patterns. XRD patterns shows the characteristics XRD peaks corresponding to the,β, andγphases. The grain sizes of the samples were decreased whereas microstrain increased with the increase in Cu2+substitution. The SEM study reveals the fine particle nature of the samples with increasing Cu content. DC resistivity indicates the metallic nature of the prepared samples. It has been found that the Cu ions have a critical influence on the resultant structure and resistivity properties of the Cu–Zn samples.