Optoelectronic properties of graphene thin films prepared by thermal reduction of graphene oxide
Optoelectronic properties of graphene thin films prepared by thermal reduction of graphene oxide
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DOI：
10.1016/j.matlet.2010.01.009
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发表时间：
2010-03-31
影响因子：
3
通讯作者：
Kim, Eui Jung
中科院分区：
文献类型：
--
作者：
Cuong, Tran Viet;Pham, Viet Hung;Kim, Eui Jung
采用氧化石墨烯热还原法制备了石墨烯薄膜。提高还原温度会导致拉曼光谱中G峰发生红移。还原温度对制备的石墨烯薄膜的形貌有很大影响。光致发光（PL）结果表明，石墨烯的带隙可以通过改变还原温度来调节。为了最大限度地减少石墨烯表面皱褶的形成，从而增强了PL和拉曼峰值强度，并降低了电阻值，热还原工艺得到了优化。(C) 2010 Elsevier B.V.版权所有
Graphene thin films have been prepared by thermal reduction of graphene oxide. Raising the reduction temperature results in a red-shift of the G peak in Raman spectra. The reduction temperature turns out to strongly affect the morphology of the prepared graphene film. Photoluminescence (PL) results show that the band gap of graphene can be tuned by varying the reduction temperature. The thermal reduction process has been optimized in an effort to minimize the formation of wrinkles/folds on the graphene surface leading to enhanced PL and Raman peak intensities and reduced electrical sheet resistance. (C) 2010 Elsevier B.V. All rights reserved.