Character, mechanism of formation and transformation of point defects in type IV silica glass
Character, mechanism of formation and transformation of point defects in type IV silica glass
复制标题
IV型石英玻璃点缺陷的特征、形成和转变机制
DOI：
10.1016/0022-3093(94)90220-8
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
V. Ermakov
中科院分区：
文献类型：
--
作者：
V. Khalilov;G. Dorfman;E. B. Danilov;M. Guskov;V. Ermakov
在600-650℃温度范围内，观察到石英玻璃中缺陷的转变。测量了163 nm能带随退火温度的变化关系。在此温度范围内，观察到-Si--H和-Si--OH中心结构的变化。这是由于在∼675°C出现结构弛豫过程所致，其性质尚不确定。结果表明，163 nm处的能带是由三配位的非顺磁性硅离子(T3+中心)引起的。该能带属于氧空位-Si--Si-。结果表明，在650℃时，Si--H中心(吸收带位于2254 cm−-1)的形成是H_2与氧空位相互作用的结果。在>；650℃下，H_2与T_3~+中心发生相互作用。由此形成的-Si--H中心的最大能带位于2264 cm-−-1。推测在IV型玻璃中，Si--OH的形成是由于H_2与过氧键的相互作用。基本吸收边的变化与羟基浓度从1500ppm到2ppm的变化相关。在-lt；2ppm区域，这些变化与OH浓度的线性依赖关系被破坏。
In the temperature range 600–650°C, transformations of defects in quartz glass are observed. The dependence of a band at 163 nm on annealing temperature is measured. Changes of structure in this temperature range are observed for the SiH and SiOH centers. These are caused by the appearance of a structural relaxating process at ∼ 675°C, the character of which is not determined. It is shown that the band at 163 nm is caused by three-coordinated non-paramagnetic silicon Si3+(T3+center). The band at 248 nm is attributed to an oxygen vacancy SiSi. It is shown that at temperature < 650°C the formation of SiH centers (absorption band at 2254 cm−1) is due to the interaction of H2with oxygen vacancies. At temperatures > 650°C, the interaction of H2with T3+centers was achieved. The maximum of the band of the SiH centers thus formed is at 2264 cm−1. It was assumed that, in the type IV glass, the formation of SiOH is due to an interaction of H2with peroxy linkages. Changes of the fundamental absorption edge are correlated with the changes of concentration of OH groups from 1500 ppm to 2 ppm. In the region < 2 ppm, the linear dependence of these changes on OH concentration is violated.