X-Band Aom on Chip
X-Band Aom on Chip
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DOI：
10.1109/mems51782.2021.9375395
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发表时间：
2021-01
期刊：
影响因子：
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通讯作者：
Hao Tian;Junqiu Liu;A. Siddharth;Terence Blésin;T. Kippenberg;S. Bhave
中科院分区：
文献类型：
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作者：
Hao Tian;Junqiu Liu;A. Siddharth;Terence Blésin;T. Kippenberg;S. Bhave
氮化硅集成光子电路因其极低的损耗和较大的克尔非线性而备受关注。然而，Pockels效应的缺乏使得电光调制变得困难，这对进一步开发具有先进功能的Si3N4电路提出了重大挑战。目前广泛采用的热光调谐方式存在功耗大、速度受限(~1 kHz)等问题。在本研究中，Si3N4环形谐振器的微波频率调制(最高可达9 GHz)是通过压电体声波来实现的，它通过应力-光学效应来调制微环。声波被紧密地限制在被释放的SiO_2薄膜中，从而提高了声能密度，从而提高了调制效率。
Silicon Nitride integrated photonic circuits have drawn much attention owing to its ultra-low loss and large Kerr nonlinearity. However, the lack of Pockels effect makes it difficult to be modulated electro-optically, which posts a major challenge for the further development of Si3N4 circuits with advanced functions. The widely adopted thermo-optical tuning suffers from large power consumption and restricted speed (~1 kHz). In this study, microwave frequency modulation (up to 9 GHz) of Si3N4 ring resonator is achieved by exciting bulk acoustic waves piezoelectrically, which modulates the microring via stress-optical effect. The acoustic waves are confined tightly in a released SiO2 thin film which enhances the acoustic energy density and thus modulation efficiency.