Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth
Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth
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DOI：
10.1103/physrevb.80.174108
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发表时间：
2009-11
影响因子：
3.7
通讯作者：
M. Tokairin;K. Fujiwara;K. Kutsukake;N. Usami;K. Nakajima
中科院分区：
文献类型：
--
作者：
M. Tokairin;K. Fujiwara;K. Kutsukake;N. Usami;K. Nakajima
通过原位观察，研究了晶液界面小面的形成机理。直接证明了在平面晶体-熔体界面上引入了波动扰动，扰动导致了锯齿形晶面的形成。当生长速度高时，观察到这样的小面形成过程，尽管平面界面在低生长速度下保持。理论分析表明，在高生长速度下由结晶潜热产生的负温度梯度放大了扰动，导致小面的形成。
We investigated the formation mechanism of a faceted crystal-melt interface by in situ observation. It was directly proved that a wavy perturbation is introduced into a planar crystal-melt interface and the perturbation results in zigzag facets. Such a facet formation process was observed when growth velocity was high, although planar interfaces were maintained at low growth velocities. It was shown by theoretical analysis that the negative temperature gradient generated by the latent heat of crystallization at high growth velocities amplifies the perturbation and leads to the facet formation.