Voltage-induced switching of nanoscale magnetic tunnel junctions
Voltage-induced switching of nanoscale magnetic tunnel junctions
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DOI：
10.1109/iedm.2012.6479130
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发表时间：
2012-12
期刊：
影响因子：
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通讯作者：
J. G. Alzate;P. Amiri;P. Upadhyaya;S. Cherepov;Jian Zhu;Mark Lewis;Richard Dorrance;J. Katine-J.-Kati
中科院分区：
文献类型：
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作者：
J. G. Alzate;P. Amiri;P. Upadhyaya;S. Cherepov;Jian Zhu;Mark Lewis;Richard Dorrance;J. Katine-J.-Kati
我们展示了电压诱导（非STT）开关的纳米级，高电阻压控磁隧道结（VMTJ）的脉冲低至10纳秒。我们显示开关能量降低约10倍（与STT相比），漏电流<105 A/cm 2。开关动力学，从准静态的纳秒政权，进行了详细研究。最后，提出了一种策略，用于消除需要外部磁场，其中切换是由不同的幅度，但相同的极性的设置/复位电压，并进行了实验验证。
We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ~10x reduction in switching energies (compared to STT) with leakage currents <; 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.