Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size
Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size
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DOI：
10.1103/physrevb.54.17858
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发表时间：
1996-12-15
影响因子：
3.7
通讯作者：
Kern, K
中科院分区：
文献类型：
--
作者：
Muller, B;Nedelmann, L;Kern, K
本文利用变温扫描隧道显微镜对Cu在Ni（100）上的成核动力学进行了全面的研究。饱和岛密度作为衬底温度和沉积速率的函数的分析表明，最小的稳定岛突然从二聚体变成四聚体。从Arrhenius图中推导出迁移势垒E（m）=（0.35+/-0.02）eV，以及二聚体键能E（B）=（0.46+/-0.19）eV。对于迁移常数D和通量R之间的低比率（D/R
We present a comprehensive study of the nucleation kinetic of Cu on Ni(100) using variable-temperature scanning tunnelling microscopy. The analysis of the saturation island density as a function of substrate temperature and deposition rate reveals that the smallest stable island abruptly changes from a dimer to a tetramer. From the Arrhenius plot, the migration barrier E(m)=(0.35+/-0.02) eV, as well as the dimer bond energy E(b)=(0.46+/-0.19) eV, has been deduced. For low ratios between the migration constant D and flux R (D/R