Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature
Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature
复制标题
低温下硅栅极全纳米线和全耗尽型 SOI MOSFET 的亚阈值摆幅
DOI：
10.1109/jeds.2021.3108854
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发表时间：
2021
影响因子：
2.3
通讯作者：
Hiramoto Toshiro
中科院分区：
文献类型：
--
作者：
Sekiguchi Shohei;Ahn Min-Ju;Mizutani Tomoko;Saraya Takuya;Kobayashi Masaharu;Hiramoto Toshiro
研究了零体因子硅环栅纳米线MOSFET从室温到4K的亚阈值摆幅。还评估了全耗尽（FD）SOI MOSFET。这两种晶体管的SS值与温度（T）成比例地减小，但在低于18K时开始饱和，类似于文献中具有非零体因子的晶体管，表明体因子与非常低温度下的SS饱和现象无关。
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in proportional to temperature (T) but start to saturate below 18K, similar to transistors with non-zero body factor in the literature, indicating that the body factor is not related to the SS saturation phenomena at very low temperatures.