Free Carrier Mobility Extraction in FETs
Free Carrier Mobility Extraction in FETs
复制标题
FET 中的自由载流子迁移率提取
DOI：
10.1109/ted.2017.2763998
复制
发表时间：
2017
影响因子：
3.1
通讯作者：
C. Enz
中科院分区：
文献类型：
--
作者：
F. Jazaeri;A. Pezzotta;C. Enz
本文提出了一种精确提取场效应晶体管中自由载流子迁移率的方法。这个推导只依赖于漂移-扩散输运模型，而不需要预先定义栅极电压迁移率依赖关系。这种方法已经用计算机辅助设计模拟技术进行了评估，即使在存在短通道效应的情况下，也证实了它的稳健性。利用所提出的模型，在室温下在28纳米商用体CMOS工艺中获得了自由载流子迁移率。
In this paper, we propose an accurate method to extract the free carrier mobility in field effect transistors. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assessed with technology computer-aided design simulations, confirming its robustness even in the presence of short-channel effects. Exploiting the proposed model, free carrier mobility is obtained in a 28-nm commercial bulk CMOS process at room temperature.