Characterization of growing thin films by in situ ellipsometry, spectral reflectance and transmittance measurements, and ion‐scattering spectroscopy
Characterization of growing thin films by in situ ellipsometry, spectral reflectance and transmittance measurements, and ion‐scattering spectroscopy
复制标题
通过原位椭圆光度法、光谱反射率和透射率测量以及离子散射光谱表征生长薄膜
DOI:
10.1063/1.1138408
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发表时间:
1985
期刊:
影响因子:
--
通讯作者:
C. Pacey
中科院分区:
文献类型:
--
作者:
R. Netterfield;P. Martin;W. Sainty;R. M. Duffy;C. Pacey
A versatile ultrahigh‐vacuum thin‐film deposition and analysis system is described. Films are deposited by electron beam evaporation with the possibility of ion beam bombardment of the growing film. Measurements of the reflectance and/or transmittance of the coating surface can be made simultaneously at 16 wavelengths across the visible or infrared spectrum. Ellipsometric measurements can also be made in situ, at a single wavelength and single angle of incidence, by an ellipsometer which can operate in either an automatic rotating analyzer mode or a manual nulling mode. The system is also equipped with an ion gun producing a submillimeter spot, and with a hemispherical sector, ion energy analyzer for ion scattering spectroscopy studies of the film surface. Results obtained during the deposition of a gold film are presented to demonstrate the capability of the system.