Spin-acoustic control of silicon vacancies in 4H silicon carbide
Spin-acoustic control of silicon vacancies in 4H silicon carbide
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DOI：
10.1038/s41928-023-01029-4
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发表时间：
2022-05
影响因子：
34.3
通讯作者：
Jonathan R. Dietz;Boyang Jiang;Aaron M. Day;S. Bhave;E. Hu
中科院分区：
文献类型：
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作者：
Jonathan R. Dietz;Boyang Jiang;Aaron M. Day;S. Bhave;E. Hu
体声谐振器可以与其他部件在同一衬底上制造，并且可以以高品质因数在不同的频率下工作。这些设备的机械动态测量具有挑战性，因为通过激光多普勒测振仪获得的表面信息缺乏关于存储在谐振器主体中的声能的信息。在这里，我们报道了在基于4H碳化硅的横向泛音体声谐振器中自然产生的负电荷单晶硅的自旋声学控制。我们证明了在室温下，声驱动可以用来诱导相干布居振荡。自旋-声谐振作为体声波共振的频率可调探头是有用的，它突出了体声波谐振器在环境工作条件下的动态应变分布。我们的方法可以应用于其他高质量因数的微电子机械系统的表征，并具有用于机械寻址量子存储器的潜力。
Bulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as the surface information available through laser Doppler vibrometry lacks information about the acoustic energy stored in the bulk of the resonator. Here we report the spin-acoustic control of naturally occurring negatively charged silicon monovacancies in a lateral overtone bulk acoustic resonator that is based on 4H silicon carbide. We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin-acoustic resonance is shown to be useful as a frequency-tunable probe of bulk acoustic wave resonances, highlighting the dynamical strain distribution inside a bulk acoustic wave resonator at ambient operating conditions. Our approach could be applied to the characterization of other high-quality-factor microelectromechanical systems and has the potential to be used in mechanically addressable quantum memory.