Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements
Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements
复制标题
DOI：
10.1021/ja035143a
复制
发表时间：
2003-08-06
影响因子：
15
通讯作者：
Marks, TJ
中科院分区：
文献类型：
--
作者：
Mushrush, M;Facchetti, A;Marks, TJ
本文报道了一系列新的苯撑-噻吩混合齐聚物的合成：2，5-二（4-正己基苯基）噻吩（dH-PTP，1），5，5'-bis（4-正己基苯基）-2，2 '-联噻吩（dH-PTTP，2），5，5”-bis（4-正己基苯基）-2，2 '：5'，2”-三噻吩（dH-PT3P，3），5，5“'-bis（4-正己基苯基）-2，2 '：5'，2”：5”，2“'-四噻吩（dH-PT 4P，4），1，4-双[5-（4-正己基苯基）-2-噻吩基]苯（dH-PTPTP，5）和2，5-二[4（4 '-正己基苯基）苯基]噻吩（dH-PPTPP，6）通过H-1 NMR、元素分析、紫外-可见光谱、差示扫描量热法和热重分析进行了表征。通过X射线衍射和扫描电子显微镜对蒸镀和溶液浇铸薄膜进行了表征。所有化合物在Si/SiO2和ITO/GR（玻璃树脂）衬底上蒸发（高达0.09 cm（2）/Vs）和溶液浇铸（高达0.03 cm（2）/VS）膜时均显示出高p型载流子迁移率。直接合成的dH-PTTP（2）显示出前所未有的迁移率、开/关比、稳定性和可加工性的组合。dH-PTTP（2）和dH-PPTPP（6）都显示可逆的、可调节的和稳定的记忆效应，即使作为溶液浇铸器件，在施加写入电压V.之后，导通特性从累积模式转变到零或耗尽模式。电荷存储分布在栅极电介质结构上，并且集中在电介质-半导体界面附近，如“浮栅”配置器件的响应所证明的。简单的非易失性元件已被制造的解决方案，只有ITO基板上使用旋涂玻璃树脂，溶液浇铸低聚半导体，涂石墨膏电极的技术。
The synthesis of a new series of mixed phenylene-thiophene oligomers is reported; 2,5-bis(4-n-hexylphenyl)thiophene (dH-PTP, 1), 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (dH-PTTP, 2), 5,5"-bis(4-n-hexylphenyl)-2,2':5',2"-terthiophene (dH-PT3P, 3), 5,5"'-bis(4-n-hexylphenyl)-2,2':5',2":5",2"'-quaterthiophene (dH-PT4P, 4), 1,4-bis[5-(4-n-hexylphenyl)-2-thienyl]benzene (dH-PTPTP, 5), and 2,5-bis[4(4'-n-hexylphenyl)phenyl]thiophene (dH-PPTPP, 6) were characterized by H-1 NMR, elemental analysis, UV-visible spectroscopy, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated and solution-cast films were characterized by X-ray diffraction and scanning electron microscopy. All compounds display high p-type carrier mobilities as evaporated (up to 0.09 cm(2)/Vs) and as solution-cast (up to 0.03 cm(2)/VS) films on both Si/SiO2 and ITO/GR (glass resin) substrates. The straightforwardly synthesized dH-PTTP (2) displays an unprecedented combination of mobility, on/off ratio, stability, and processability. Both dH-PTTP (2) and dH-PPTPP (6) display a reversible, tunable, and stable memory effect even as solution-cast devices, with turn-on characteristics shifting from accumulation mode to zero or depletion mode after a writing voltage V. is applied. The charge storage is distributed over the gate dielectric structure and is concentrated near the dielectric-semiconductor interface, as evidenced by the response of "floating gate" configuration devices. Simple nonvolatile elements have been fabricated by solution-only techniques on ITO substrates using spin-coated glass resin, solution-cast oligomeric semiconductors, and painted graphite paste electrodes.