Evolution of the 7/2 Fractional Quantum Hall State in Two-Subband Systems
Evolution of the 7/2 Fractional Quantum Hall State in Two-Subband Systems
复制标题
DOI：
10.1103/physrevlett.107.266802
复制
发表时间：
2011-12-20
影响因子：
8.6
通讯作者：
Baldwin, K. W.
中科院分区：
文献类型：
--
作者：
Liu, Yang;Shabani, J.;Baldwin, K. W.
报道了在电子占据两个电子子带的宽量子阱中，当总朗道能级填充因子为v=7/2时，分数量子霍尔态的演化。这些数据揭示了作为密度、磁场倾斜角或电荷分布对称性的函数的微妙而明显的演化。例如，在中等倾角时，我们观察到v=7/2FQHS的加强。此外，在非对称变化分布的井中，当对称子带v(S)的L1填充因子等于5/2时，存在一个发展的FQHS，而反对称子带的填充因子为1<；v(A)<；2。
We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of v = 7/2 in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the v = 7/2 FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband v(S) equals 5/2 while the antisymmetric subband has a filling factor of 1 < v(A) < 2.