Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
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DOI：
10.1016/j.snb.2015.01.019
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发表时间：
2015-04-01
影响因子：
8.4
通讯作者：
Ambacher, Oliver
中科院分区：
文献类型：
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作者：
Espinosa, Nayeli;Schwarz, Stefan U.;Ambacher, Oliver
本文介绍了利用AlGaN/GaN高电子迁移率场效应管(HEMTs)成功检测不同靶DNA浓度的方法。在应用靶DNA之前，用两种不同浓度的互补DNA对门进行生物功能化。测试了10(-16)m o l/L的剂量，直到门控饱和。每次将DNA浓度提高10倍，并测量晶体管的转移特性。阈值电压漂移和漏源电流变化与靶浓度有关，服从SiPS吸附模型。AlGaN/GaN HEMT对很低的靶DNA浓度非常敏感，检测下限为10(-14)mol/L。低探针DNA浓度的栅极饱和了较低的靶DNA浓度，并提供了较快的杂交平衡常数。(C)2015爱思唯尔B.V.保留所有权利。
This paper presents the successful detection of different target-DNA concentrations using AlGaN/GaN high electron mobility field effect transistors (HEMTs). The gate was bio-functionalized with two different densities of complementary DNA before application of target-DNA. Dosages of 10(-16) mol/L up to the gate saturation were tested. The DNA concentration was increased by a factor of 10 each time, and the transistor transfer characteristics were measured. The threshold voltage shift and drain-source current change depend on target concentration and obey the Sips adsorption model. The AlGaN/GaN HEMTs are highly sensitive to very low target-DNA concentrations with a detection limit of 10(-14) mol/L. The gates with a low probe-DNA density were saturated with a lower target-DNA concentration and presented a faster hybridization equilibrium constant. (C) 2015 Elsevier B.V. All rights reserved.