Dislocation cross-slip in GaN single crystals under nanoindentation
Dislocation cross-slip in GaN single crystals under nanoindentation
复制标题
纳米压痕下GaN单晶的位错交叉滑移
DOI：
10.1063/1.3593381
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发表时间：
2011-05-30
影响因子：
4
通讯作者：
Yang, H.
中科院分区：
文献类型：
--
作者：
Huang, J.;Xu, K.;Yang, H.
利用纳米压痕和阴极发光技术研究了GaN单晶中位错的增殖和运动机制。位错环可以通过交叉滑移从一个平面增加到另一个平面，从而在压痕过程中在GaN中产生广泛的塑性变形。退火过程中压痕诱导位错的显著运动进一步支持了这一机制。此外，通过考虑交叉滑动机制，可以更好地理解所谓的弹出事件，其中压头突然更深地进入材料而不施加任何额外的力。
The dislocation multiplication and movement mechanism in GaN single crystals has been studied using nanoindentation and cathodoluminescence. Dislocation loops can multiply and move from plane to plane by cross-slip, thus producing a wide plastic deformation in GaN during indentation. This mechanism is further supported by the remarkable movement of indentation induced dislocations during annealing. Furthermore, the so-called pop-in events, in which the indenter suddenly enters deeper into the material without the application of any additional force, can be better understood by considering the cross-slip mechanism.