Influence of light‐induced defects in hydrogenated amorphous silicon on charge carrier dynamics
Influence of light‐induced defects in hydrogenated amorphous silicon on charge carrier dynamics
复制标题
氢化非晶硅光致缺陷对载流子动力学的影响
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
M. Kunst
中科院分区：
文献类型：
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作者：
A. Werner;M. Kunst
采用时间分辨微波电导法研究了氢化非晶硅在长时间光照后的载流子衰减过程。结果表明，亚稳态缺陷的产生取决于光照时间。可以区分两种不同的缺陷：一种减少了体中的载流子寿命，而另一种增加了表面的子带隙吸收。
Charge carrier decay processes in hydrogenated amorphous silicon after extended illumination are studied by the time‐resolved microwave conductivity method. It is shown that creation of metastable defects depends on illumination time. Two different defects can be distinguished: one which decreases the charge carrier lifetime in the bulk, whereas the other one increases the subband gap absorption at the surface.