Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
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TiN栅电极引起的HfSiON电介质的热降解及其对电性能的影响

DOI:
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发表时间:
2006
期刊:
Japanese Journal of Applied Physics 45
影响因子:
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通讯作者:
H.Watanabe
H.Watanabe
中科院分区:
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文献类型:
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作者:
尾崎 哲;他;H.Watanabe

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