All solution-chemistry approach for YBa2Cu3O7−δ-coated conductors

All solution-chemistry approach for YBa2Cu3O7−δ-coated conductors
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DOI:
10.1063/1.1470225
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发表时间:
2002-04
影响因子:
4
通讯作者:
M. Siegal;P. Clem;J. Dawley;R. J. Ong;M. Rodriguez;D. L. Overmyer
M. Siegal;P. Clem;J. Dawley;R. J. Ong;M. Rodriguez;D. L. Overmyer
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
M. Siegal;P. Clem;J. Dawley;R. J. Ong;M. Rodriguez;D. L. Overmyer

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在磁体和电力技术中存在对低成本涂层导体制造方法的需求。在Nb掺杂的钛酸锶(Nb:STO)缓冲Ni(100)带材上生长了高临界电流密度的YBa2Cu3O7YBCO(−δ)薄膜。所有缓冲层和超导层都是使用溶液化学沉积的。在Ni(100)上形成50 nm厚的Nb:STO种子层,作为后续较厚Nb:STO层生长的模板。Nb掺杂改善了STO的导电性和氧扩散阻挡性能。YBCO直接在该缓冲层上异质外延生长,其输运系数Jc(77K)=1.3 mA/cm2。
A need exists for low-cost coated-conductor fabrication methods for applications in magnet and electric-power technologies. We demonstrate high-critical current density (Jc) YBa2Cu3O7−δ (YBCO) films grown on Nb-doped SrTiO3 (Nb:STO) buffered Ni(100) tapes. All buffer and superconductor layers are deposited using solution chemistry. A 50 nm thick Nb:STO seed layer on Ni(100) acts as a template for the growth of subsequent thicker layers of Nb:STO. Nb doping improves the electrical conductivity and oxygen diffusion barrier properties of STO. YBCO grows heteroepitaxially directly on this buffer layer, resulting in a transport Jc(77 K)=1.3 MA/cm2.