n‐channel insulated‐gate field‐effect transistors in Hg1−xCdxTe with x=0.215
n‐channel insulated‐gate field‐effect transistors in Hg1−xCdxTe with x=0.215
复制标题
Hg1−xCdxTe 中的 n 沟道绝缘栅场效应晶体管，其中 x=0.215
DOI：
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发表时间：
1980
期刊：
影响因子：
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通讯作者：
I. Kidron
中科院分区：
文献类型：
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作者：
Y. Nemirovsky;S. Margalit;I. Kidron
介绍并分析了n沟道Hg 1 −xCdxTe（x=0.215）绝缘栅场效应晶体管的特性，沟道长度为4 μm，绝缘层为0.2 μ mZnS。该晶体管在77 K时的阈值电压为−0.1 V，有效反型层电子迁移率为（1-2）×104 cm 2 V−1 sec−1。测量了表面迁移率对表面电场的强烈依赖性。晶体管可用作HgCdTe单片结构的开关和放大元件。
The characteristics of n‐channel insulated‐gate field‐effect transistors in Hg1−xCdxTe with x=0.215, channel length of 4 μm, and 0.2‐μm ZnS as an insulator are presented and analyzed. The transistors exhibit at 77 K a threshold voltage of −0.1 V and an effective inversion layer electron mobility of (1–2) ×104 cm2 V−1 sec−1. A strong dependence of the surface mobility upon surface electric field is measured. The transistors may be used as switching and amplifying elements for monolithic structures in HgCdTe.