Boron acceptor concentration in diamond from excitonic recombination intensities
Boron acceptor concentration in diamond from excitonic recombination intensities
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根据激子复合强度计算金刚石中的硼受体浓度
DOI：
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发表时间：
2011
期刊：
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通讯作者：
P. Bergonzo
中科院分区：
文献类型：
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作者：
J. Barjon;T. Tillocher;N. Habka;O. Brinza;J. Achard;R. Issaoui;F. Silva;C. Mer;P. Bergonzo
通过在一系列在CM -3处使用硼（2×1016）的同型钻石层（5×1018），与硼掺杂的一系列同型钻石层中，研究了兴奋性重组。中性骨架刺激与自由式重组强度之间的比率与高达6×1017cm -3的硼含量成正比，并开始饱和钻石中的刺激性概率仅被一个硼杂质捕获，并且似乎与观察到的饱和度非常吻合，这表明在高硼浓度下与近邻居硼配对结合的激子的形成。
Excitonic recombinations are investigated by cathodoluminescence in a series of homoepitaxial diamond layers doped with boron in the range (2×1016)-(5×1018) at cm -3. As opposed to earlier observations made on polycrystalline boron-doped diamond, we show that the ratio between the neutral-boron bound exciton and the free-exciton recombination intensities is proportional to the boron content up to 6×1017cm -3 and starts to saturate above this value. The probability of an exciton in diamond being trapped by only one boron impurity is calculated and appears to be in good agreement with the observed saturation, suggesting the formation of excitons bound to near-neighbor boron pairs at high boron concentrations. © 2011 American Physical Society.